On-chip temperature detection device

ABSTRACT

An on-chip temperature detection device includes: a bipolar type power transistor; a mirror transistor in which a collector current, which is proportional to a collector current of the power transistor, flows; a current detection section that detects the collector current of the mirror transistor; a voltage detection section that detects a voltage between a base and an emitter of the power transistor; and a calculation section that calculates a chip temperature of the power transistor, based upon the collector current of the mirror transistor detected by the current detection section, and upon the voltage between the base and the emitter of the power transistor detected by the voltage detection section.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a technique for detecting the chiptemperature of a power transistor, which drives a load such as aninductive load or a resistive load, quickly, at a low cost, and at highaccuracy, so that it enables the entire system to operate safely.

2. Description of the Related Art

From the past, various protective circuits have been indispensable forthe proper utilization of a power transistor, such as circuits forprotection from excess electrical current and for protection from excessload (excess temperature) and the like. It is per se known to utilize amirror transistor in which flows an electrical current which isproportional to the main electrical current as a current detection meansfor protection from excess electrical current, and it is per se known touse a chip temperature detection means for protection from excess load.As one example of a prior art chip temperature detection means, there isa per se known method of forming a diode in a polysilicon thin film uponthe surface of the power transistor, and of detecting the temperature bytaking advantage of the temperature dependence of the bias voltage whena fixed electric current flows in the forward direction through saidpolysilicon diode. This method has the beneficial point of being easy toapply, since such a polysilicon diode is perfectly separated from thepower transistor by an dielectric material, and accordingly they do notmutually interfere with one another.

SUMMARY OF THE INVENTION

However, with a prior art technique such as the one described above, itis necessary to provide separate detection means for protecting againstexcess electrical current and excess load, in other words it isnecessary to provide both the mirror transistor and also the polysilicondiode, and as a result the problem arises that the area which isoccupied upon the power transistor chip becomes large.

Furthermore, with the above described prior art, as well as it beingnecessary to provide a mirror emitter (or source; hereinafter this willbe referred to as the emitter) terminal for the mirror transistor, it isalso necessary to provide two terminals for the polysilicon diode and itis moreover necessary to attach wires to these two terminals of thepolysilicon diode. With a power transistor which is adapted to deal witha high electrical current, it is particularly necessary to attachemitter wires to the bonding pad as much and densely as possible, butwith the construction described above there is the problem that it isnot possible to attach emitter wires densely over the portion of thecircumference of the chip where the polysilicon diode wires are present.

Yet further, if a current control type element which originally does notuse polysilicon is used as the power element as described in JapaneseLaid-Open Patent Publication H6-252408, it is needed to provide atemperature detection means such as the above described polysilicondiode or the like. As a result, a further process is entailed which isnot required in the original semiconductor element manufacturingprocess, so that, along with the manufacturing cost being increased, theproblem arises that a stepped portion is created upon the aluminumwiring above the temperature detection element and a bad influence isexerted upon the basic characteristics of the element itself.

Moreover, the symmetry of the original layout of an element isdeteriorated by the presence of the region for temperature detection,and accordingly the problem regarding the layout also arises that a badinfluence being exerted upon the characteristics of the element can notbe avoided.

The present invention solves problems like the ones described above withprior art techniques, and provides an on-chip temperature detectiondevice which is capable of performing speedy on-chip temperaturedetection at high accuracy, while not requiring the provision of anyseparate temperature detection means, thus preventing increase of thenumber of element manufacturing processes and enlargement of the chiparea.

An on-chip temperature detection device according to the presentinvention, comprises: a bipolar type power transistor; a mirrortransistor in which a collector current, which is proportional to acollector current of the power transistor, flows; a current detectionsection that detects the collector current of the mirror transistor; avoltage detection section that detects a voltage between a base and anemitter of the power transistor; and a calculation section thatcalculates a chip temperature of the power transistor, based upon thecollector current of the mirror transistor detected by the currentdetection section, and upon the voltage between the base and the emitterof the power transistor detected by the voltage detection section.

Another on-chip temperature detection device according to the presentinvention, comprises: a bipolar type power transistor that is driven bya first drive signal; a voltage detection section that detects a voltagebetween a base and an emitter of the power transistor; a second drivesignal generation circuit that generates a second drive signal which isa different signal from the first drive signal, and which drives thepower transistor so that the voltage between the base and the emitter ofthe power transistor is less than a predetermined voltage; and acalculation section which calculates a chip temperature of the powertransistor, when the power transistor is being driven by the seconddrive signal, based upon at least the voltage between the base and theemitter of the power transistor detected by the voltage detectionsection.

Another on-chip temperature detection device according to the presentinvention, comprises: a bipolar type power transistor that is driven bya first drive signal; a mirror transistor in which a collector current,which is proportional to a collector current of the power transistor,flows, when the power transistor is being driven by the first drivesignal; a second drive signal generation circuit that generates a seconddrive signal which is a different signal from the first drive signal,which flows a predetermined current in the mirror transistor so that avoltage between a base and an emitter of the mirror transistor is lessthan a predetermined voltage, and which drives the power transistor tobe OFF; a voltage detection section that detects the voltage between thebase and the emitter of the mirror transistor; and a calculation sectionthat calculates a chip temperature of the power transistor, when themirror transistor and the power transistor are being driven by thesecond drive signal, based upon at least the voltage between the baseand the emitter of the mirror transistor detected by the voltagedetection section.

Another on-chip temperature detection device according to the presentinvention, comprises: a bipolar type power transistor that is driven bya first drive signal; a mirror transistor in which a collector current,which is proportional to the collector current of the power transistor,flows, when the power transistor is being driven by the first drivesignal; an OFF signal generation circuit that generates an OFF signalwhich turns the power transistor OFF when the first drive signal is OFF;a current drive circuit that flows a predetermined current in the mirrortransistor so that a voltage between a base and an emitter of the mirrortransistor is less than a predetermined voltage, when the first drivesignal is OFF and the power transistor is turned OFF by the OFF signal;a voltage detection section that detects the voltage between the baseand the emitter of the mirror transistor; and a calculation section thatcalculates a chip temperature of the power transistor, when the firstdrive signal is OFF and the power transistor is turned OFF by the OFFsignal, based upon at least the voltage between the base and the emitterof the mirror transistor detected by the voltage detection section.

Another on-chip temperature detection device according to the presentinvention, comprises: a power transistor that may be a bipolar type or aMOS type including an IGBT, having a collector or drain terminal, anemitter or source terminal, and a base or gate terminal; a mirrortransistor having a collector or drain terminal and a base or gateterminal which are the same, respectively, as the collector or drainterminal and the base or gate terminal of the power transistor, and amirror emitter or mirror source terminal which is independent from theemitter or source terminal of the power transistor; a control circuitthat keeps a collector or drain current which flows in the mirrortransistor constant; and a calculation section that flows apredetermined current in a collector or drain of the mirror transistoronly while the power transistor is OFF, that measures the voltagebetween the base or gate terminal and the emitter or source terminal ofthe mirror transistor at this time, and that calculates the chiptemperature of the power transistor based on a temperaturecharacteristic of the voltage.

Another on-chip temperature detection device according to the presentinvention, comprises: a power transistor that supplies a current basedupon a drive signal; a mirror transistor in which flows a current whichis proportional to the current being supplied by and flowing in thepower transistor; a current detection means for detecting the currentflowing in the mirror transistor; a voltage detection means fordetecting a voltage between a drive signal input terminal and a currentsupply terminal of the power transistor; and a calculation means forcalculating a chip temperature of the power transistor, based upon atleast one of the current detected by the current detection means and thevoltage detected by the voltage detection means.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing the structure of a first preferredembodiment of the present invention.

FIG. 2 is a graph showing the relationship between a collector currentand a control voltage (voltage between a base and an emitter) Vbe duringthe operation of the circuit according to the first preferred embodimentshown in FIG. 1.

FIG. 3 is a circuit diagram showing the structure of a second preferredembodiment of the present invention.

FIG. 4 is a graph showing the relationship between the control voltageVbe between the base and the emitter and the chip temperature T duringthe operation of the circuit according to the second preferredembodiment shown in FIG. 3.

FIG. 5 is a circuit diagram showing the structure of a third preferredembodiment of the present invention.

FIG. 6 is a circuit diagram showing the structure of a fourth preferredembodiment of the present invention.

FIG. 7 is a timing chart for a fifth preferred embodiment of the presentinvention.

FIG. 8 is a circuit diagram showing the structure of a sixth preferredembodiment of the present invention.

FIG. 9 is a figure showing a MOSFET.

FIG. 10 is a figure showing an IGBT.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment

FIG. 1 is a circuit diagram showing the structure of a first preferredembodiment of the present invention. FIG. 1 is a circuit diagram for abipolar type power transistor which comprises a current mirror, and inthis figure the reference symbol 1 denotes a power transistor, while 2denotes a mirror transistor whose structure is the same as that of thepower transistor 1 while its capacity is smaller, 3 denotes a drivecircuit, 4 denotes a load (for example, an inductive load or a resistiveload), 5 denotes an amplifier whose impedance is high (for example an opamp), 6 denotes a temperature calculation section, 7 denotes a memorywhich stores a map giving a saturation electrical current Ise as afunction of temperature T, 8 denotes a comparator, R denotes a currentdetection resistor whose resistance value is sufficiently small, 15denotes a Vbe detection section, Ic1 denotes the collector current ofthe power transistor 1, Ic2 denotes the collector current of the mirrortransistor 2, and Vbe denotes the voltage between the base and theemitter of the power transistor 1 (also called the “control voltage”).It should be noted that the comparator 8 is an element which constitutesan excess current detection circuit, and it is not directly related tothe temperature detection of present invention. In FIG. 1, all of theelements except the load 4 are formed on-chip.

Generally the collector current Ic of a bipolar type power transistoralmost satisfies the following Equation (1):

Ic=Ise×exp (qVbe/nkT)  (1)

where n is a real number greater than 1 (its value may for example bebetween 1 and 2), q is the charge of an electron, k is Boltzmann'sconstant, and T is the temperature.

The current Ise in Equation (1) is termed the saturation current, andfor any particular chip it only depends upon the temperature Accordinglyit is possible to measure and to store the Ise as a function oftemperature for each type of chip during manufacture.

In this first preferred embodiment of the present invention, the chiptemperature of the bipolar type power transistor is estimated using theabove Equation (1). This will now be explained. While the powertransistor 1 is ON, the current Ic1 flows in the collector of the powertransistor 1, and the current Ic2 which is proportional to Ic1 flows tothe collector of the mirror transistor 2. This current Ic2 flows throughthe current detection resistor R, and as a result a voltage is generatedwhich is proportional to Ic2, this voltage being amplified by theamplifier 5. Ic2 can be easily measured if the mirror transistor 2 isused in this manner, and accordingly it is also possible easily tomeasure the collector current Ic1 which is proportional thereto. On theother hand, the voltage Vbe between the base and the emitter is detectedby the Vbe detection section 15. In concrete terms, for example, if oneof the two impedance terminals of an amplifier (such as an op amp) whoseimpedance is high is connected to the base terminal while the other isconnected to the emitter terminal, then an output is obtained at theoutput of the amplifier which corresponds to the voltage Vbe between thebase and the emitter.

It is possible to estimate the chip temperature T using the aboveEquation (1) if Ic and Vbe are measured in the above manner. A concreteexample of the way in which this estimation is performed will bedescribed below. First, the initial estimated value of the temperature Tis taken to be T0, and Vbe0 is calculated from T0 and Ic, and then Vbe0is compared with Vbe. If Vbe0 is greater than Vbe, then T0 is increasedfor the next estimated value thereof, while if Vbe0 is less than Vbe,then T0 is decreased for the next estimated value thereof; and then thecalculation is performed again. The process is repeated until thiscalculation converges, and thereby the chip temperature T is obtained.This calculation is performed by the temperature calculation section 6.

According to the first preferred embodiment of the present invention asdescribed above, it is possible to measure the chip temperature onlyusing the mirror transistor 2 which is used for excess electric currentprotection, even though no temperature measurement means such as apolysilicon diode is provided separately. Because of this it is possibleto reduce the portion of the surface area of the power transistor whichis ineffective, and moreover the beneficial result is obtained that itis possible to affix the main emitter wires sufficiently densely.Furthermore the benefit is obtained that it is possible to curtailincrease in the number of processes due to the provision of suchpolysilicon, and to eliminate all problems caused thereby.

It should be understood that the comparator 8 shown in FIG. 1 is anelement which is required in the structure of the excess electriccurrent detection circuit, and which dispatches an excess currentdetected signal when a voltage (the terminal voltage of the currentdetection resistor R) which is proportional to the collector current Ic2(and accordingly to Ic1) becomes greater than a predetermined referencevoltage Vs. In the prior art, the mirror transistor 2 was only used forthe above described excess current detection function, but in thepresent invention, as described above, the construction also uses thesame mirror transistor 2 for excess temperature detection. It should benoted that although it is not shown in the figure, a switching devicemay be provided for changing over the connection of the emitter of themirror transistor 2 between the temperature detection circuit and theexcess current detection circuit, since the same mirror transistor 2 isused both for detecting current and also for detecting temperature.

Second Embodiment

There are the following two problems with the first preferred embodimentof the present invention described above. The first such problem isthat, as shown in the current-voltage characteristic of FIG. 2, theabove Equation (1) is only valid over a comparatively small currentrange, and in particular, in the region where the current becomes large,the influence of parasitic resistance and the like becomes prominent,and the deviation from the equation becomes great. Furthermore, thesecond problem is that, as will be understood from the explanation ofthe temperature estimation calculation given above, this calculation fortemperature estimation is complicated, and accordingly a calculationdevice of high processing power is required for performing it.

In addition to the above described problems, the first preferredembodiment can only be applied to a bipolar type transistor, so that itsrange of application is relatively limited. On the other hand, with anIGBT (Insulated Gate type Bipolar Transistor) or a power MOSFET or thelike, as shown by the dotted line in FIG. 2, although the deviation fromEquation (1A) or Equation (1B), which is described below and similar toEquation (1), is large in the region in which its control voltage (gatevoltage, Vgs or Vge in the figure) is greater than the threshold voltage(Vth in the figure), on the other hand, it is possible to estimate thetemperature in the range in which Vgs or Vge is less than Vth, sinceEquation (1A) or Equation (1B) is valid.

Id=Ise×exp (qVgs/nkT)  (1A) for MOSFET

Id=Ise×exp (qVge/nkT)  (1B) for IGBT

FIG. 3 is a circuit diagram showing a second preferred embodiment of thepresent invention. In this figure, the reference symbol 9 denotes an opamp (operational amplifier), while 16 denotes a temperature calculationsection, S1 and S2 are switches, and −V is a negative voltage sourcewhich takes the emitter of the power transistor 1 as a reference; andthe other elements are the same as ones in FIG. 1 and are denoted by thesame reference symbols. It should be understood that the comparator 8 ofFIG. 1 for excess current detection is omitted in the figure(hereinafter the same for all the subsequent figures).

In this second preferred embodiment, during the time period in which thepower transistor 1 is switching-off (hereinafter simply referred to asOFF), a minute predetermined electric current flows at its collector,and this is done in order to measure the control voltage Vbe at thistime. To put it in another manner, this minute predetermined electriccurrent is flowed without switching on the power transistor 1.

For temperature measurement, first the switch S1 is turned OFF and theswitch S2 is turned ON. When this is done the emitter potential of themirror transistor 2 becomes equal to the emitter potential of the powertransistor 1 (=0V) due to the imaginary or virtual short at the op amp9. As a result, a voltage V is applied to the current detection resistorR, and an electric current equal to V/R flows. This electric current(Ic2) flows to the mirror transistor 2, and furthermore an electriccurrent (Ic1) proportional thereto flows in the power transistor 1.Since here it is possible to ensure that the electric currents (Ic1 andIc2) which flow at this time have small values by setting the currentdetection resistor R to be large, accordingly it can be used in therange in FIG. 2 in which Vbe is smaller than Vbeon. Moreover, thevoltage Vbe between the base and the emitter at this time has the samevalue for the power transistor 1 and the mirror transistor 2. The abovedescribed voltage Vbe between the base and the emitter is detected bythe same method as explained above with reference to FIG. 1.

FIG. 4 is a figure showing the relationship between Vbe which has beenmeasured as described above and chip temperature T. As shown in FIG. 4,Vbe shows a almost linear function of T, and for example is given by theapproximate equation Vbe=αT+β, where α and β are constants. Accordinglyin this case, just by obtaining Vbe, it becomes possible to calculatethe chip temperature T from the above approximate equation, simply byusing the four basic operations of arithmetic. The temperaturecalculation section 16 is a circuit or an item of software whichperforms the above described calculation so as to obtain the temperatureT.

With the second preferred embodiment of the present invention asdescribed above, just as in the case of the first preferred embodimentdescribed above, it is possible to measure the chip temperature by usingthe mirror transistor which is used for excess current protection, evenwithout providing any separate temperature measurement means such as apolysilicon diode or the like. As a result, the beneficial results areobtained that it is possible to reduce the ineffective surface area uponthe power transistor, that it is possible to attach the main emitterwires sufficiently and densely, and that it is possible to eliminate theadditional process for forming such a polysilicon element, andaccordingly to avoid various problems which are caused by thisadditional process.

Furthermore, with this second preferred embodiment of the presentinvention, the influence of parasitic resistance and the like is smallbecause the electric current is kept small, and accordingly the accuracyof temperature measurement becomes good, and moreover the specificbenefit is obtained that it is possible to calculate the estimatedtemperature in a simple manner. Yet further, this second preferredembodiment can be applied to a power transistor such as a MOS or anIGBT, as well as to a bipolar type of power transistor, so that itsrange of application is relatively wide.

However, in the application of this second preferred embodiment, thefollowing points must be accorded particular attention.

First, in this second preferred embodiment, the temperature can only bemeasured when the power transistor 1 is OFF. However, in the case of acircuit like a chopper, a converter, or an inverter, since the powertransistor 1 is repeatedly turned ON and OFF at a predetermined rate(for example by PWM control), accordingly it is possible to implement aconstruction in which the measurement of temperature is performed onlyduring the OFF period of the power transistor 1, and thus no problemarises, even though it is not possible to measure the temperature whilethe power transistor 1 is ON.

Furthermore, in this second preferred embodiment, a minute electriccurrent is flowed to the collector of the power transistor 1 while it isOFF, in order to measure the temperature. Since a large voltage isapplied to the collector of the power transistor 1 while it is OFF, arelatively high consumption of electrical power is entailed by the flowof the electric current even though it is minute. It is necessary to setthe value of the current detection resistor R to be sufficiently greatin order to reduce this useless power consumption as much as possible,and thereby the value of the electric current which flows fortemperature measurement is minimized.

Third Embodiment

FIG. 5 is a circuit diagram showing a third preferred embodiment of thepresent invention. In this figure, the reference symbol 10 denotes an opamp; and the other elements are the same as ones in FIG. 3 and aredenoted by the same reference symbols. In this third preferredembodiment, a minute electric current flows to the collector of thepower transistor 1 during the time period that it is OFF, and thecontrol voltage Vbe (the voltage between the base and the emitter) ofthe mirror transistor 2 at this time is measured. However, in the caseof this third preferred embodiment, the values of Vbe for the powertransistor 1 and for the mirror transistor 2 are different.

In order to measure the temperature, first, the switch S1 is turned OFFand the switch S2 is turned ON. When this is done, the emitter potentialof the mirror transistor 2 becomes equal to −V1 due to the imaginaryshort of the op amp 10, and as a result a voltage (V−V1) is applied tothe current detection resistor R, so that an electric current (V−V1)/Rflows therein. This electric current (Ic2) flows to the mirrortransistor 2. If the current detection resistor R is set to be large, itis possible to ensure that the current which flows at this time issmall, and it is possible to make the control voltage Vbe for the mirrortransistor 2 shown in the figure to be less than a threshold valueVbeon. The relationship between Vbe measured in this manner and the chiptemperature T is as shown in FIG. 4, and it is seen that Vbe has analmost linear function of T. Accordingly, in this case as well, in thesame way as with the second preferred embodiment, it is possible tocalculate the chip temperature T from Vbe by using simple arithmeticoperations, that is the four basic operations of arithmetic, so that thesame benefits are obtained as in the case of the second preferredembodiment, as described above.

In addition, in this third preferred embodiment, the voltage which isapplied between the base and the emitter of the power transistor 1becomes (Vbe−V1), which is different from the voltage Vbe between thebase and the emitter of the mirror transistor 2. Here, by setting thevoltage −V1 to be a sufficiently great negative voltage, it is possibleto ensure that the voltage between the base and the emitter of the powertransistor 1 is 0 V or is negative. By doing this, no electric currentflows to the power transistor 1, even though electric current is flowingto the mirror transistor 2 for measuring the temperature, andaccordingly it is possible to make the electric current which flows formeasuring the temperature small. As a result, it is possible further toreduce the useless consumption of electrical power for measuring thetemperature in this third preferred embodiment, as compared with thesecond preferred embodiment described above.

Fourth Embodiment

FIG. 6 is a circuit diagram showing a fourth preferred embodiment of thepresent invention. In this figure, the reference symbol 11 denotes aMOSFET, S3 is a switch, and the portion 12 surrounded by the broken lineis a voltage setting circuit which sets a voltage −V2. The otherelements are the same as ones in FIG. 3 and are denoted by the samereference symbols.

In the circuit of FIG. 6, according to a method different from that ofFIG. 5 above, during the time period that the power transistor 1 is OFF,a minute electric current flows only in the mirror transistor 2, and thecontrol voltage Vbe at this time is measured.

In order to measure the temperature, first, in the same way as with thethird preferred embodiment described above, the switch S1 is turned OFFand the switch S3 is turned ON. When the switch S3 is turned ON, thepower transistor 1 goes OFF, and no electric current flows therethrough.A voltage (V−V2) is applied to the gate of the MOSFET 11. As a result, aconstant electric current which is determined by the gate voltage flowsin the MOSFET 11. This electric current flows to the mirror transistor2. If the value of (V−V2) is set to be small, it is possible to ensurethat the current which flows at this time is small, and it is possibleto make the control voltage Vbe for the mirror transistor 2 to be lessthan the threshold value Vbeon. The relationship between Vbe measured inthis manner and the chip temperature T is the same as that describedabove and shown in FIG. 4, and it is seen that Vbe has an almost linearfunction of T. Accordingly, in this case as well, in the same way aswith the second and the third preferred embodiments, it is possible tocalculate the chip temperature T from Vbe by using simple arithmeticoperations such as the four basic operations of arithmetic, so that thesame benefits are obtained as in the case of those embodiments, asdescribed above.

Furthermore, in this case as well, just as with the third preferredembodiment described above, no current flows in the power transistor 1even though current is flowing in the mirror transistor 2 for measuringthe temperature, and accordingly it is possible to make the electriccurrent which flows for measuring the temperature small, and it ispossible to reduce the useless consumption of electrical power formeasuring the temperature.

Yet further, in this fourth preferred embodiment, a difference ascompared with the third preferred embodiment is that no feedback loop isestablished from the emitter of the mirror transistor 2 to its base.Accordingly, the stability and responsiveness of the circuit is betterwith this fourth preferred embodiment, than in the case of the thirdpreferred embodiment.

Moreover it would also be acceptable, as an alternative, for the voltage(−V2) which is supplied to the gate of the MOSFET 11 in FIG. 6 to beprovided from an external circuit not shown in the figure as shown by(−V2) in FIG. 6, but it is possible further to enhance the accuracy whenthe voltage setting circuit 12 which is surrounded by the broken line isemployed. In other words, if a constant voltage −V2 is supplied fromexternally, then when the temperature varies the electric current Ibvaries due to the temperature characteristics of the MOSFET 11, andthere is a danger that the accuracy of temperature detection may bedeteriorated. Due to this, if the voltage setting circuit 12 is formedon-chip using the same MOSFET as the MOSFET 11, then it is possible tomaintain a constant electric current Ib even if the temperature changes,since the voltage −V2 changes in correspondence with the temperaturechange of the MOSFET 11.

Embodiment Five

FIG. 7 is a figure showing a fifth preferred embodiment of the presentinvention, and is a timing chart showing temperature measurement for thesecond, third, and fourth preferred embodiments of the presentinvention. As described above, in each of these previously explainedpreferred embodiments, it is arranged for a minute electric current toflow to the collector of the mirror transistor 2 during the time periodthat the power transistor 1 is OFF, and the chip temperature is measuredby measuring the control voltage Vbe at this time. The flow of currentat this time represents a wastage of electrical power. With this fifthpreferred embodiment, in order to eliminate all unnecessary wastage ofelectrical power, as shown in FIG. 7, when the power transistor 1 isOFF, the electrical current for measurement flows in the form of a shortpulse, i.e. only over a predetermined short time period, and temperaturemeasurement is not performed over the remainder of the time period whenthe power transistor 1 is OFF.

Sixth Embodiment

FIG. 8 is a circuit diagram showing a sixth preferred embodiment of thepresent invention. In this figure, the reference symbols 13 and 14denote MOSFETs, and S4 is a switch; and the other elements are the sameas ones in FIG. 6 and are denoted by the same reference symbols.

The structure of this sixth preferred embodiment of the presentinvention shown in FIG. 8 is almost the same as that of the fourthpreferred embodiment shown in FIG. 6, except for the point that thecurrent Ic2 for temperature measurement of the fourth preferredembodiment is, in this sixth preferred embodiment, realized as twocurrents Ic21 and Ic22 of two types. The switch S4 is provided forswitching between these two currents Ic21 and Ic22. If the controlvoltage when the current Ic21 is flowing is termed Vbe1 and the controlvoltage when the current Ic22 is flowing is termed Vbe2, then it ispossible to calculate the temperature from their difference (Vbe1−Vbe2)by using Equation (2) below:

Ic21/Ic22=exp{q(Vbe1−Vbe2)/nkT}  (2)

As will be understood from Equation (2), the relationship between theratio of the electric currents and the control voltage difference isdetermined only by the chip temperature and by various physicalconstants. Accordingly, the measurement of chip temperature T using thisEquation (2) does not involve any deviations due to process orindividual differences, so that it is thus possible to performtemperature measurement with high accuracy.

However, in order to apply this sixth preferred embodiment of thepresent invention, it is necessary to measure the voltage twice, whichmay take a certain amount of time. If this is inconvenient, it will beacceptable, for example, for the device to be structured so that whenthe power source is initially switched ON the temperature is measuredusing the relationship between electric current ratio and controlvoltage difference, a correction coefficient for compensating forindividual variation or the like of the chip is calculated using thisvalue and is saved, and thereafter, after this correction coefficienthas been calculated, the temperature is calculated, for example, simplyfrom the relationship between a single electric current and a singlecontrol voltage, in the same manner as in the fourth preferredembodiment described above and shown in FIG. 6.

Since as explained above, according to the present invention, it isarranged to detect the chip temperature by taking advantage of themirror transistor which in any case is provided for the purpose ofexcess current detection, accordingly it becomes unnecessary to provideany special chip temperature detection means such as a polysilicondiode, and thereby increase of the ineffective surface area upon thechip and increase of its cost are suppressed, and moreover it ispossible to ensure that no negative influence is exerted by theprovision of such a detection means upon the characteristics of thesemiconductor element itself.

The present invention is not to be considered as being limited by theabove described preferred embodiments; various details of the preferredembodiments disclosed could be varied, without departing from the spiritand scope of the present invention.

Thus, by way of example, in the above described preferred embodiments,the explanation was made in terms of the power transistor 1 being a NPNtransistor; but this is not to be considered as being necessarilylimiting. The present invention could also be applied to a power MOSFETor to an IGBT. In the case of application to a power MOSFET, the NPNtransistors used for the above described power transistor 1 and mirrortransistor 2 should be replaced by MOSFETs, as shown in FIG. 9. Thevoltage Vgs between the gate and the source in the FIG. 9 arrangement isto be considered as replacing the voltage Vbe between the base and theemitter in the previous description. In Equations (1) and (2), Ic andVbe can be replaced with Id and Vgs. Furthermore, in the case ofapplication to an IGBT, the NPN transistors used for the above describedpower transistor 1 and mirror transistor 2 should be replaced by IGBTS,as shown in FIG. 10. The voltage Vge between the gate and the emitter inthe FIG. 10 arrangement is to be considered as replacing the voltage Vbebetween the base and the emitter in the previous description. InEquations (1) and (2), Vbe can be replaced with Vge.

In the above described preferred embodiments of the present invention,all of the elements except the load 4 were formed on-chip. However, thepresent invention is not to be considered as being limited by this typeof construction; it is actually only necessary for the power transistor1 and the mirror transistor 2 to be formed on-chip. However, it is verydesirable for the power transistor 1, the mirror transistor 2, and theresistor R to be formed on-chip.

It should be understood that the on-chip temperature detection device ofthe above described preferred embodiments can be used in any applicationwhere a power transistor is employed. For example, it can be used in acontrol system for an electric vehicle motor, or in a control system fora linear motor, or the like.

The disclosure of the following priority application is herebyincorporated herein by reference:

Japanese Patent Application No. 2001-90259, filed Mar. 27, 2001.

What is claimed is:
 1. An on-chip temperature detection device,comprising: a bipolar type power transistor; a mirror transistor inwhich a collector current, which is proportional to a collector currentof said power transistor, flows; a current detection section thatdetects the collector current of said mirror transistor; a voltagedetection section that detects a voltage between a base and an emitterof said power transistor; and a calculation section that calculates achip temperature of said power transistor, based upon the collectorcurrent of said mirror transistor detected by said current detectionsection, and upon the voltage between the base and the emitter of saidpower transistor detected by said voltage detection section.
 2. Anon-chip temperature detection device according to claim 1, wherein: acollector terminal of said power transistor and a collector terminal ofsaid mirror transistor are connected together, and a base terminal ofsaid power transistor and a base terminal of said mirror transistor areconnected together; and an emitter terminal of said power transistor andan emitter terminal of said mirror transistor are providedindependently.
 3. An on-chip temperature detection device according toclaim 1, wherein: said power transistor is driven by a first drivesignal; a second drive signal generation circuit that generates a seconddrive signal which is a different signal from said first drive signal,and which drives said power transistor so that the voltage between thebase and the emitter of said power transistor is less than apredetermined voltage, is further provided; and said calculation sectioncalculates the chip temperature of said power transistor, based upon thecollector current of said mirror transistor detected by said currentdetection section and upon the voltage between the base and the emitterof said power transistor detected by said voltage detection section,when said power transistor is being driven by said second drive signal.4. An on-chip temperature detection device according to claim 3, whereinsaid second drive signal generation circuit generates said second drivesignal so as to make an electrical potential of an emitter of saidmirror transistor substantially equal to an electrical potential of theemitter of said power transistor.
 5. An on-chip temperature detectiondevice according to claim 3, wherein said second drive signal generationcircuit outputs said second drive signal for a predetermined period whensaid first drive signal is OFF.
 6. An on-chip temperature detectiondevice, comprising: a power transistor that supplies a current basedupon a drive signal;, a mirror transistor in which flows a current whichis proportional to said current being supplied by and flowing in saidpower transistor; a current detection means for detecting said currentflowing in said mirror transistor; a voltage detection means fordetecting a voltage between a drive signal input terminal and a currentsupply terminal of said power transistor; and a calculation means forcalculating a chip temperature of said power transistor, based upon saidcurrent detected by said current detection means and said voltagedetected by said voltage detection means.
 7. An on-chip temperaturedetection device, comprising: a bipolar type power transistor; a mirrortransistor in which a collector current, which is proportional to acollector current of said power transistor, flows; a current detectionsection that detects the collector current of said mirror transistor;and a voltage detection section that detects a voltage between a baseand an emitter of said power transistor; and a calculation section thatcalculates a chip temperature of said mirror transistor detected by saidcurrent detection section, and upon the voltage between the base and theemitter of said power transistor detected by said voltage detectionsection, using a saturation current of said power transistor defined bythe chip temperature to be calculated.